Application:

Semiconductor ion implantation is a new technology of material surface modification. It has been widely used in the doping of semiconductor materials, the surface modification of metals, ceramics, polymers etc. It is a necessary technique in the contemporary manufacturing large scale integrated circuit.

Ion implantation is the injection of the ion beam with an energy order of 100keV into a material where the ion beam will have a series of physical and chemical interactions with atoms or molecules in the material. The incident ions gradually lose their energy, and finally stop in the material and cause a change in composition, structure and properties of the surface of the material, thus optimizing the surface properties of the material, or giving some new excellent performance to the material.

Material Property:

XYXC tungsten and molybdenum components used in ion implantation have high purity, good mechanical properties to ensure they are suitable for the processing of arc chamber components with complex shapes.

High purity tungsten and molybdenum arc chamber is the basic guarantee for semiconductor chip yield. XYXC high performance ion source head tungsten and molybdenum parts greatly reduce the machine maintenance frequency and ensure the customer's production capacity, are the best choice for customers.